Models of void electromigration
نویسندگان
چکیده
منابع مشابه
Tomography of integrated circuit interconnect with an electromigration void
An integrated circuit interconnect was subject to accelerated-life test conditions to induce an electromigration void. The silicon substrate was removed, leaving only the interconnect test structure encased in silica. We imaged the sample with 1750 eV photons using the 2-ID-B scanning transmission x-ray microscope at the Advanced Photon Source, a third-generation synchrotron facility. Fourteen ...
متن کاملObservation of Void Formation Induced by Electromigration in Metallic Films *’ **
für Naturforschung in cooperation with the Max Planck Society for the Advancement of Science under a Creative Commons Attribution 4.0 International License. Dieses Werk wurde im Jahr 2013 vom Verlag Zeitschrift für Naturforschung in Zusammenarbeit mit der Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. digitalisiert und unter folgender Lizenz veröffentlicht: Creative Commons Namen...
متن کاملElectromigration lifetimes and void growth at low cumulative failure probability
We studied electromigration (EM) lifetimes and void growth at low cumulative failure probability. We carried out EM test in damascene Cu lines using sudden-death type test structures. Its cumulative failure probability ranges from 0.005 to 90%. To investigate the void growth behaviour, Cu microstructures was investigated. EM lifetime shows correlation with the void nucleation site and the void ...
متن کاملAn unfitted finite element method for the numerical approximation of void electromigration
Microelectronic circuits usually contain small voids or cracks, and if those defects are large enough to sever the line, they cause an open circuit. We present a numerical method for investigating the migration of voids in the presence of both surface diffusion and electric loading. Our mathematical model involves a bulk-interface coupled system, with a moving interface governed by a fourth-ord...
متن کاملVoid Scaling and Void Profiles in CDM Models
Received ABSTRACT An analysis of voids using cosmological N-body simulations of cold dark matter (CDM) models is presented. It employs a robust statistics of voids, that was recently applied to discriminate between data from the Las Campanas Redshift Survey (LCRS) and different cosmological models. Here we extend the analysis to 3D and show that typical void sizes D in the simulated galaxy samp...
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ژورنال
عنوان ژورنال: European Journal of Applied Mathematics
سال: 2001
ISSN: 0956-7925,1469-4425
DOI: 10.1017/s0956792501004326